IXTL2X200N085T
MOSFET 2N-CH 85V 112A I5-PAKManufacturer: IXYS
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The IXYS IXTL2X200N085T is an 85V, dual N-channel TrenchMV™ MOSFET array packaged in an ISOPLUSi5-Pak™ for through-hole mounting. This component offers a continuous drain current of 112A at 25°C and a low on-resistance of 6mOhm at 50A and 10V (Id, Vgs). Key parameters include a gate charge (Qg) of 152nC (Max) @ 10V and input capacitance (Ciss) of 7600pF (Max) @ 25V. With a maximum power dissipation of 150W and an operating temperature range of -55°C to 175°C, this device is suitable for high-power switching applications in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 150W |
| Drain to Source Voltage (Vdss) | 85V |
| Current - Continuous Drain (Id) @ 25°C | 112A |
| Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 25V |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 50A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 152nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOPLUSi5-Pak™ |
Request a Quote
Clients Also Buy
IXTA152N085T7
MOSFET N-CH 85V 152A TO263-7
IXTA180N085T
MOSFET N-CH 85V 180A TO263
IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7