IXFN27N120SK
SIC 2N-CH 1200V SOT227BManufacturer: IXYS
Categories: FET, MOSFET Arrays
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IXYS IXFN27N120SK is a 2 N-Channel Silicon Carbide (SiC) MOSFET array housed in a SOT-227B (miniBLOC) package. This component is designed for high-voltage applications, featuring a Drain to Source Voltage (Vdss) of 1200V (1.2kV). The chassis mount configuration facilitates efficient thermal management. Its SiC technology enables superior performance characteristics compared to traditional silicon-based devices, making it suitable for demanding power electronic systems. Applications include high-voltage power supplies, motor drives, and renewable energy inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | - |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SOT-227B |