GWM70-01P2
MOSFET 6N-CH 100V 70A ISOPLUSManufacturer: IXYS
Categories: FET, MOSFET Arrays
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The IXYS GWM70-01P2 is a 6-channel N-channel MOSFET array designed for high-power applications. This component features a Drain to Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 70A at 25°C. The Rds On is specified at a maximum of 14mOhm at 35A and 10V, with a gate charge (Qg) of 110nC at 10V.
Constructed with Metal Oxide technology, this device utilizes the ISOPLUS-DIL™ package for surface mounting. The array is configured as three 3-phase bridges, making it suitable for power conversion and motor control applications in industries such as industrial automation and renewable energy systems. The component operates within a temperature range of -40°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 17-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 70A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 35A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | ISOPLUS-DIL™ |
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