GWM160-0055X1-SMDSAM
MOSFET 6N-CH 55V 150A ISOPLUSManufacturer: IXYS
Categories: FET, MOSFET Arrays
Quality Control: Learn More
IXYS GWM160-0055X1-SMDSAM is a high-performance MOSFET array featuring six N-channel devices configured as a 3-phase bridge. This surface-mount component offers a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 150A at 25°C. The device boasts a low on-resistance of 3.3mOhm at 100A and 10V, and a gate charge (Qg) of 105nC maximum at 10V. Operating across a junction temperature range of -55°C to 175°C, the GWM160-0055X1-SMDSAM is housed in a 17-SMD, Gull Wing ISOPLUS-DIL™ package. This MOSFET array is suitable for applications in industrial power systems and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 17-SMD, Gull Wing |
| Mounting Type | Surface Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 150A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | ISOPLUS-DIL™ |
Request a Quote
Clients Also Buy
FMP76-010T
MOSFET N/P-CH 100V 62A I4-PAC
GWM160-0055P3
MOSFET 6N-CH 55V 160A ISOPLUS
GMM3X180-004X2-SMD
MOSFET 6N-CH 40V 180A 24SMD
