GWM160-0055X1-SL
MOSFET 6N-CH 55V 150A ISOPLUSManufacturer: IXYS
Categories: FET, MOSFET Arrays
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The IXYS GWM160-0055X1-SL is a 6 N-Channel MOSFET array designed for high-efficiency power conversion applications. Featuring a continuous drain current (Id) of 150A at 25°C and a drain-to-source voltage (Vdss) of 55V, this device offers low on-resistance of 3.3mOhm at 100A and 10V. The GWM160-0055X1-SL is configured as a 3-phase bridge, simplifying complex power stage designs. With a gate charge (Qg) of 105nC at 10V and a threshold voltage (Vgs(th)) of 4.5V at 1mA, it ensures robust switching characteristics. The ISOPLUS-DIL™ package with surface mount mounting type and 17-SMD, Flat Leads case facilitates thermal management and integration. Operating across a temperature range of -55°C to 175°C, this component is suitable for demanding applications in the automotive, industrial, and renewable energy sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 17-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 150A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | ISOPLUS-DIL™ |
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