GWM160-0055P3
MOSFET 6N-CH 55V 160A ISOPLUSManufacturer: IXYS
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The IXYS GWM160-0055P3 is a six-channel N-channel MOSFET array featuring a 3-phase bridge configuration. This component offers a 55V drain-source voltage and a continuous drain current capability of 160A at 25°C, with a low on-resistance of 3mOhm at 100A and 10V. Designed for surface mounting, it is housed in a 17-SMD, Flat Leads ISOPLUS-DIL™ package. The MOSFET array operates across a temperature range of -40°C to 175°C (TJ). Key parameters include a maximum gate charge of 90nC at 10V and a threshold voltage of 4V at 1mA. This component is suitable for applications in power management and motor control systems within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 17-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 160A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | ISOPLUS-DIL™ |
Request a Quote
Clients Also Buy
MCB40P1200LB-TRR
SIC 2N-CH 1200V 58A 9SMPD
GWM180-004X2-SL
MOSFET 6N-CH 40V 180A ISOPLUS
FMP76-010T
MOSFET N/P-CH 100V 62A I4-PAC
