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FMP76-01T

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FMP76-01T

MOSFET N/P-CH 100V 54A I4-PAC

Manufacturer: IXYS

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The IXYS FMP76-01T is a MOSFET array featuring N-channel and P-channel devices in a common drain configuration. This component offers a Drain to Source Voltage (Vdss) of 100V. Continuous drain current capabilities are specified at 54A (Tc) for one channel and 62A (Tc) for another, with corresponding maximum power dissipation of 89W and 132W, respectively. On-resistance (Rds On) is rated at 24mOhm @ 38A, 10V for the N-channel and 11mOhm @ 25A, 10V for the P-channel. Gate charge (Qg) is 197nC @ 10V for the N-channel and 104nC @ 10V for the P-channel. Input capacitance (Ciss) is 1370pF @ 25V (N-channel) and 5080pF @ 25V (P-channel). The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in the ISOPLUS i4-PAC™ through-hole package, this MOSFET array finds application in power switching and motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseISOPLUSi5-Pak™
Mounting TypeThrough Hole
ConfigurationN and P-Channel, Common Drain
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max89W, 132W
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C54A (Tc), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds1370pF @ 25V, 5080pF @ 25V
Rds On (Max) @ Id, Vgs24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs197nC @ 10V, 104nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id4V @ 250µA, 4.5V @ 250µA
Supplier Device PackageISOPLUS i4-PAC™

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