FMM60-02TF
MOSFET 2N-CH 200V 33A I4-PACManufacturer: IXYS
Categories: FET, MOSFET Arrays
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The IXYS HiPerFET™ FMM60-02TF is a dual N-channel power MOSFET designed for high-efficiency switching applications. This component features a 200V Drain-Source Voltage (Vdss) and a continuous drain current capability of 33A at 25°C. The on-resistance (Rds On) is rated at 40mOhm maximum at 30A and 10V Vgs. With a maximum power dissipation of 125W and a low gate charge of 90nC (max) at 10V, the FMM60-02TF offers excellent switching performance. The device is housed in an ISOPLUS i4-PAC™ through-hole package, facilitating easier thermal management and board assembly. Its robust construction and operating temperature range of -55°C to 150°C make it suitable for demanding applications in power supplies, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 125W |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 33A |
| Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
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