FMM300-0055P
MOSFET 2N-CH 55V 300A I4-PACManufacturer: IXYS
Categories: FET, MOSFET Arrays
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The IXYS FMM300-0055P is a dual N-channel power MOSFET designed for high-current applications. This component features a drain-to-source voltage (Vdss) rating of 55V and a continuous drain current (Id) capability of 300A at 25°C. The on-resistance (Rds On) is specified at a maximum of 3.6mOhm at 150A and 10V Vgs. With a gate charge (Qg) of 172nC at 10V, this MOSFET is suitable for power switching and motor drive applications. The FMM300-0055P utilizes MOSFET technology and is housed in an ISOPLUS i4-PAC™ through-hole package. Its operating temperature range is -55°C to 175°C. This device finds utility in various industrial sectors including power supplies, electric vehicles, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 300A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 150A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 172nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
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