FMM150-0075X2F
MOSFET 2N-CH 75V 120A I4-PACManufacturer: IXYS
Categories: FET, MOSFET Arrays
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The IXYS FMM150-0075X2F is a dual N-channel MOSFET array within the HiPerFET™ and TrenchT2™ series, housed in an ISOPLUS i4-PAC™ package. This through-hole component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain current (Id) of 120A at 25°C. The MOSFET array offers a low on-resistance of 5.8mOhm maximum at 100A and 10V. Key parameters include a gate charge (Qg) of 178nC at 10V and input capacitance (Ciss) of 10500pF at 25V. With a maximum power dissipation of 170W and an operating temperature range of -55°C to 175°C, this device is suitable for high-power applications in sectors such as industrial power supplies and automotive systems.
Additional Information
Series: HiPerFET™, TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 45 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 170W |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 120A |
| Input Capacitance (Ciss) (Max) @ Vds | 10500pF @ 25V |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 178nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
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