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MDD950-12N1W

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MDD950-12N1W

DIODE MODULE GP 1.2KV 950A

Manufacturer: IXYS

Categories: Diode Arrays

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The IXYS MDD950-12N1W is a high-power diode module featuring a single pair of diodes connected in series. This component offers a maximum DC reverse voltage (Vr) of 1200 V and an average rectified current (Io) per diode of 950 A. The forward voltage drop (Vf) is specified at 880 mV at 500 A, with a reverse leakage current of 50 mA at 1200 V. Designed for robust performance, it has a standard recovery speed exceeding 500 ns. The module is chassis mountable, facilitating efficient thermal management. Operating junction temperatures range from -40°C to 150°C. This diode array is suitable for applications in industrial power conversion, electric vehicle charging, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)18 µs
TechnologyStandard
Diode Configuration1 Pair Series Connection
Current - Average Rectified (Io) (per Diode)950A
Supplier Device PackageModule
Operating Temperature - Junction-40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If880 mV @ 500 A
Current - Reverse Leakage @ Vr50 mA @ 1200 V

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