MDD810-12N2
DIODE MODULE GP 1200V 807AManufacturer: IXYS
Categories: Diode Arrays
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IXYS MDD810-12N2, a diode module, features a 1 pair series connection configuration. This component offers a maximum DC reverse voltage of 1200V and a high average rectified current (Io) per diode of 807A. The forward voltage (Vf) is specified at 1.24V maximum at 2000A. Reverse leakage current is 50mA at 1200V, with a reverse recovery time (trr) of 16.5 µs. Designed for standard recovery with a speed classified as >500ns, >200mA (Io), this module is chassis mountable for efficient thermal management. The operating junction temperature range is -40°C to 150°C. This device is suitable for applications in power conversion, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 16.5 µs |
| Technology | Standard |
| Diode Configuration | 1 Pair Series Connection |
| Current - Average Rectified (Io) (per Diode) | 807A |
| Supplier Device Package | - |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.24 V @ 2000 A |
| Current - Reverse Leakage @ Vr | 50 mA @ 1200 V |