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DPJ50XS1800NA

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DPJ50XS1800NA

DIODE MOD GP 1800V 25A SOT227B

Manufacturer: IXYS

Categories: Diode Arrays

Quality Control: Learn More

The IXYS DPJ50XS1800NA is a dual independent diode array packaged in a SOT-227B (miniBLOC) chassis mount configuration. This component offers a maximum DC reverse voltage (Vr) of 1800 V and an average rectified current (Io) per diode of 25 A. Featuring a forward voltage (Vf) of 6.99 V at 25 A, this diode array includes a fast recovery time (trr) of 30 ns. The reverse leakage current at Vr is specified as 250 µA at 1800 V. With an operating junction temperature range of -40°C to 150°C, the DPJ50XS1800NA is suitable for applications in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: DPJ50XS1800NARoHS Status: ROHS3 CompliantManufacturer Lead Time: 33 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
TechnologyStandard
Diode Configuration2 Independent
Current - Average Rectified (Io) (per Diode)25A
Supplier Device PackageSOT-227B
Operating Temperature - Junction-40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1800 V
Voltage - Forward (Vf) (Max) @ If6.99 V @ 25 A
Current - Reverse Leakage @ Vr250 µA @ 1800 V

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