DCG85X1200NA
DIODE MOD SIC 1200V 43A SOT227BManufacturer: IXYS
Categories: Diode Arrays
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IXYS DCG85X1200NA is a Silicon Carbide (SiC) Schottky diode module featuring two independent diodes. This component is rated for a DC reverse voltage (Vr) of 1200 V and an average rectified current (Io) of 43 A per diode. The forward voltage (Vf) is a maximum of 1.8 V at 40 A. Reverse leakage current at the maximum reverse voltage is 400 µA. The device exhibits no recovery time above 500 mA, indicating high-speed switching performance. Manufactured with SiC technology, it offers superior thermal and electrical characteristics. The DCG85X1200NA is housed in a SOT-227-4, miniBLOC package, designed for chassis mounting. Operating junction temperatures range from -40°C to 175°C. This diode array is suitable for applications in power conversion, electric vehicle powertrains, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 61 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 43A |
| Supplier Device Package | SOT-227B |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 40 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
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