DCG45X1200NA
DIODE MOD SIC 1200V 22A SOT227BManufacturer: IXYS
Categories: Diode Arrays
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IXYS DCG45X1200NA is a Silicon Carbide (SiC) Schottky diode module featuring two independent diodes within a SOT-227B (miniBLOC) package. Each diode is rated for a maximum DC reverse voltage of 1200V and an average rectified forward current of 22A. The forward voltage drop at a forward current of 20A is a maximum of 1.8V. This device exhibits a reverse leakage current of 200 µA at 1200V and boasts no recovery time greater than 500mA. The operating junction temperature range is from -40°C to 175°C, and it is designed for chassis mounting. This component is utilized in high-power applications within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 61 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 22A |
| Supplier Device Package | SOT-227B |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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