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DCG130X1200NA

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DCG130X1200NA

DIODE MOD SIC 1200V 64A SOT227B

Manufacturer: IXYS

Categories: Diode Arrays

Quality Control: Learn More

The IXYS DCG130X1200NA is a Silicon Carbide Schottky diode array featuring two independent diodes in a SOT-227B (miniBLOC) package. This component offers a maximum DC reverse voltage of 1200 V and a forward voltage drop of 1.8 V at 60 A. Each diode is rated for an average rectified current (Io) of 64 A with a low reverse leakage of 800 µA at 1200 V. The device exhibits no significant reverse recovery time, contributing to high-frequency operation. Its robust construction and 175°C junction operating temperature make it suitable for demanding applications in power conversion, electric vehicle charging, and industrial motor drives. The chassis mount configuration facilitates efficient thermal management in high-power systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 61 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Diode Configuration2 Independent
Current - Average Rectified (Io) (per Diode)64A
Supplier Device PackageSOT-227B
Operating Temperature - Junction-40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 60 A
Current - Reverse Leakage @ Vr800 µA @ 1200 V

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