IS66WVE4M16EALL-70BLI
IC PSRAM 64MBIT PARALLEL 48TFBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI's IS66WVE4M16EALL-70BLI is a 64Mbit Pseudo SRAM (PSRAM) memory integrated circuit. This high-speed volatile memory features a parallel interface and a memory organization of 4M x 16. With an access time of 70 ns and a write cycle time of 70 ns, it is designed for demanding applications requiring rapid data retrieval and manipulation. The component operates on a supply voltage range of 1.7V to 1.95V and is specified for an extended industrial operating temperature range of -40°C to 85°C. This device is housed in a compact 48-TFBGA (6x8) surface-mount package, making it suitable for space-constrained designs. It finds application in various industries including telecommunications, industrial automation, and consumer electronics where efficient, high-performance volatile memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 64Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | PSRAM (Pseudo SRAM) |
| Memory Format | PSRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 4M x 16 |
| Programmable | Not Verified |
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