IS64WV51216EEBLL-10BLA3
IC SRAM 8MBIT PARManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI's IS64WV51216EEBLL-10BLA3 is a high-performance, asynchronous SRAM memory IC with a density of 8Mbit (512K x 16). This component features a rapid 10 ns access time and a 10 ns write cycle time, ensuring efficient data handling. Operating within a voltage range of 2.4V to 3.6V, it is designed for surface mount applications and is supplied in a compact 48-TFBGA (6x8) package. The IS64WV51216EEBLL-10BLA3 is AEC-Q100 qualified, making it suitable for demanding automotive environments. Its robust design and reliable performance cater to applications requiring fast, volatile memory solutions. This device is commonly utilized in automotive systems, industrial controls, and advanced consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2.4V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 16 |
| Qualification | AEC-Q100 |
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