IS64WV51216BLL-10MA3
IC SRAM 8MBIT PARALLEL 48MINIBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI's IS64WV51216BLL-10MA3 is an 8Mbit asynchronous SRAM device organized as 512K x 16. This high-performance memory component features a rapid 10 ns access time, making it suitable for demanding applications. The device operates within a 2.4V to 3.6V supply voltage range and offers a 10 ns write cycle time. Its robust design supports an extended operating temperature range of -40°C to 125°C (TA). The IS64WV51216BLL-10MA3 is packaged in a compact 48-miniBGA (9x11) configuration, ideal for space-constrained surface-mount designs. This memory solution finds application in sectors requiring fast data access and reliable operation, such as industrial control, automotive systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2.4V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-miniBGA (9x11) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
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