IS64WV25616EDBLL-10BA3
IC SRAM 4MBIT PARALLEL 48TFBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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The ISSI IS64WV25616EDBLL-10BA3 is an asynchronous SRAM memory integrated circuit with a density of 4Mbit, organized as 256K words by 16 bits. This device offers a fast access time of 10 ns and a write cycle time of 10 ns. It features a parallel memory interface and operates from a supply voltage range of 2.4V to 3.6V. The IS64WV25616EDBLL-10BA3 is housed in a 48-TFBGA (6x8) package, designed for surface mount applications. Its operating temperature range is -40°C to 125°C (TA). This component is commonly utilized in applications requiring high-speed data buffering and storage, including networking equipment, industrial control systems, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2.4V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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