IS61WV51216EEALL-20TLI
IC SRAM 8MBIT PARManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
Quality Control: Learn More
ISSI's IS61WV51216EEALL-20TLI is an 8Mbit asynchronous SRAM with a parallel interface. This memory device offers a 512K x 16 organization, providing a substantial memory footprint for demanding applications. Featuring a fast access time of 20 ns and a write cycle time of 20 ns, it ensures efficient data handling. Operating across a voltage range of 1.65V to 2.2V, this component is designed for surface mount applications, housed in a 44-TSOP II package. The extended operating temperature range of -40°C to 85°C makes it suitable for industrial, automotive, and consumer electronics sectors where reliability is paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
IS42S16160G-7TL
IC DRAM 256MBIT PAR 54TSOP II
IS43TR16512S2DL-107MBLI
IC DRAM 8GBIT PARALLEL 96LWBGA
IS42S16160G-6TLI-TR
IC DRAM 256MBIT PAR 54TSOP II
