IS61WV51216EEALL-20BLI
IC SRAM 8MBIT PARManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
Quality Control: Learn More
ISSI's IS61WV51216EEALL-20BLI is an 8Mbit asynchronous SRAM organized as 512K x 16. This memory component offers a rapid 20 ns access time and a 20 ns write cycle time, operating from a supply voltage of 1.65V to 2.2V. The device is housed in a 48-TFBGA (6x8) package, designed for surface mount applications. It operates within an industrial temperature range of -40°C to 85°C. Applications for this type of memory can be found in industrial control systems, networking equipment, and consumer electronics. The part number IS61WV51216EEALL-20BLI signifies its asynchronous SRAM technology, 8Mbit density, parallel interface, and 20 ns speed.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
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