IS61WV51216EDALL-20BLI-TR
IC SRAM 8MBIT PARALLEL 48TFBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI's IS61WV51216EDALL-20BLI-TR is an 8Mbit asynchronous SRAM device organized as 512K words by 16 bits. This high-speed memory offers a 20 ns access time and a 20 ns write cycle time, facilitating efficient data throughput. Operating from a 1.65V to 2.2V supply, it features a low power consumption profile suitable for power-sensitive applications. The component is housed in a compact 48-TFBGA (6x8) package for surface mounting, and is supplied on tape and reel for automated assembly. Its robust operating temperature range of -40°C to 85°C makes it reliable in demanding environments. Applications include networking, telecommunications, and industrial automation systems where fast, non-volatile data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
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