IS61WV51216EDALL-20BLI
IC SRAM 8MBIT PARALLEL 48TFBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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The ISSI IS61WV51216EDALL-20BLI is an 8Mbit asynchronous SRAM device organized as 512K x 16. It features a fast access time of 20 ns and a write cycle time of 20 ns, ensuring efficient data handling. This component operates from a supply voltage range of 1.65V to 2.2V, making it suitable for low-power applications. The IS61WV51216EDALL-20BLI is housed in a compact 48-TFBGA (6x8) package, designed for surface mounting. Its operating temperature range of -40°C to 85°C (TA) allows for deployment in demanding environmental conditions. This memory solution is commonly utilized in telecommunications, industrial control systems, and consumer electronics where high-speed, non-volatile data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
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