IS61WV25616FALL-10TLI-TR
IC SRAM 4MBIT PARManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI, Integrated Silicon Solution Inc. offers the IS61WV25616FALL-10TLI-TR, a high-performance asynchronous SRAM. This component provides a 4Mbit memory density organized as 256K words by 16 bits. Featuring a rapid 10 ns access time and a 10 ns write cycle time, it ensures efficient data handling. The device operates with a low supply voltage range of 1.65V to 2.2V, making it suitable for power-sensitive applications. Packaged in a 44-TSOP II format for surface mounting, this SRAM is designed for demanding environments with an operating temperature range of -40°C to 85°C. Its parallel interface facilitates straightforward integration into various system designs. Applications for this component include industrial automation, networking equipment, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
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