IS61WV25616EFBLL-10BLI
IC SRAM 4MBIT PARManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
Quality Control: Learn More
Integrated Silicon Solution Inc's IS61WV25616EFBLL-10BLI is a 4Mbit asynchronous SRAM device with a parallel interface. This memory IC offers a fast 10 ns access time and a word/page write cycle time of 10 ns, enabling high-speed data operations. Organized as 256K x 16, it provides a robust solution for applications requiring quick random access to data. The device operates within a voltage range of 2.4V to 3.6V and is designed for surface mount installation in a compact 48-TFBGA (6x8) package. Its industrial operating temperature range of -40°C to 85°C makes it suitable for demanding environments. This component finds application in various industries, including industrial automation, telecommunications, and consumer electronics, where fast, volatile memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
IS42S16160G-7TL
IC DRAM 256MBIT PAR 54TSOP II
IS43TR16512S2DL-107MBLI
IC DRAM 8GBIT PARALLEL 96LWBGA
IS64WV12816DBLL-12CTLA3-TR
IC SRAM 2MBIT PARALLEL 44TSOP II
