IS61WV25616EDBLL-8BLI
IC SRAM 4MBIT PARALLEL 48TFBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI IS61WV25616EDBLL-8BLI is a high-speed, asynchronous SRAM memory device. This component offers 4Mbit of storage capacity, organized as 256K words by 16 bits, and features a parallel memory interface. With an access time of 8 nanoseconds, it is designed for applications demanding rapid data retrieval. The device operates from a 3V to 3.6V supply voltage and supports an industrial temperature range of -40°C to 85°C. Packaged in a compact 48-TFBGA (6x8) form factor for surface mounting, it is suitable for use in demanding electronic systems across various industries. The write cycle time for a word is also 8ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 8ns |
| Memory Interface | Parallel |
| Access Time | 8 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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