IS61WV25616EDALL-20BLI
IC SRAM 4MBIT PARALLEL 48TFBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
Quality Control: Learn More
ISSI's IS61WV25616EDALL-20BLI is a high-speed, asynchronous SRAM memory component offering 4Mbit of storage organized as 256K words by 16 bits. This device features a fast access time of 20 ns and a write cycle time of 20 ns, ensuring efficient data handling. Operating from a supply voltage range of 1.65V to 2.2V, it is designed for surface mount applications and comes in a compact 48-TFBGA (6x8) package. The operating temperature range is specified as -40°C to 85°C (TA). Its parallel interface and robust specifications make it suitable for demanding applications in the industrial and telecommunications sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
IS42S16160G-7TL
IC DRAM 256MBIT PAR 54TSOP II
IS43TR16512S2DL-107MBLI
IC DRAM 8GBIT PARALLEL 96LWBGA
IS64WV12816DBLL-12CTLA3-TR
IC SRAM 2MBIT PARALLEL 44TSOP II
