IS61WV12824-8BL
IC SRAM 3MBIT PARALLEL 119PBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI's IS61WV12824-8BL is a high-speed, asynchronous SRAM component offering 3Mbit of memory capacity organized as 128K x 24. Featuring an access time of 8 ns and a write cycle time of 8 ns, this device is designed for demanding parallel memory applications. The component operates within a voltage range of 3.135V to 3.465V and is housed in a compact 119-PBGA (14x22) package suitable for surface mounting. Its operational temperature range is 0°C to 70°C. This SRAM is utilized in various industrial sectors requiring fast data access and storage, including telecommunications and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 119-BBGA |
| Mounting Type | Surface Mount |
| Memory Size | 3Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3.135V ~ 3.465V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 119-PBGA (14x22) |
| Write Cycle Time - Word, Page | 8ns |
| Memory Interface | Parallel |
| Access Time | 8 ns |
| Memory Organization | 128K x 24 |
| Programmable | Not Verified |
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