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IS61NLP25636B-200B3LI-TR

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IS61NLP25636B-200B3LI-TR

IC SRAM 9MBIT PARALLEL 165TFBGA

Manufacturer: ISSI, Integrated Silicon Solution Inc

Categories: Memory

Quality Control: Learn More

ISSI's IS61NLP25636B-200B3LI-TR is a high-performance synchronous SRAM memory IC with a 9Mbit capacity, organized as 256K x 36 bits. Operating at a clock frequency of 200 MHz, this device offers an access time of 3.1 ns, facilitating rapid data retrieval. The memory interface is parallel, and the component utilizes SRAM – Synchronous, SDR technology. Packaged in a 165-TFBGA (13x15) format suitable for surface mounting, it operates within an industrial temperature range of -40°C to 85°C and requires a supply voltage of 3.135V to 3.465V. This component finds application in various demanding sectors, including networking, telecommunications, and high-speed computing. The device is supplied in Tape & Reel packaging for automated assembly.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case165-TBGA
Mounting TypeSurface Mount
Memory Size9Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply3.135V ~ 3.465V
TechnologySRAM - Synchronous, SDR
Clock Frequency200 MHz
Memory FormatSRAM
Supplier Device Package165-TFBGA (13x15)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time3.1 ns
Memory Organization256K x 36
ProgrammableNot Verified

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