IS61LV12816L-10BLI
IC SRAM 2MBIT PARALLEL 48TFBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI's IS61LV12816L-10BLI is an asynchronous SRAM memory integrated circuit offering 2Mbit of storage capacity. This component features a parallel memory interface with a memory organization of 128K x 16, providing a dense solution for data buffering and storage. With an access time of 10 ns and a write cycle time of 10 ns, it is well-suited for high-speed applications. The device operates within a voltage range of 3.135V to 3.6V and is specified for an industrial operating temperature range of -40°C to 85°C. Packaged in a compact 48-TFBGA (6x8) format for surface mounting, the IS61LV12816L-10BLI finds application in various sectors including telecommunications, industrial control, and consumer electronics where fast, volatile memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3.135V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 128K x 16 |
| Programmable | Not Verified |
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