IS46LQ16256AL-062TBLA2
IC DRAM 4GBIT LVSTL 200VFBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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The ISSI IS46LQ16256AL-062TBLA2 is a high-performance Mobile LPDDR4X SDRAM component with a memory density of 4Gbit. This device operates at a clock frequency of 1.6 GHz and features a fast access time of 3.5 ns. The memory interface utilizes LVSTL signaling, and the component is organized as 256M x 16. Designed for demanding applications, it offers a wide operating voltage range of 1.06V to 1.17V and 1.7V to 1.95V. The IS46LQ16256AL-062TBLA2 is supplied in a compact 200-VFBGA package with dimensions of 10x14.5 mm and is rated for automotive grade operation with AEC-Q100 qualification. Its operating temperature range is -40°C to 105°C (TC). This component finds application in automotive systems, consumer electronics, and other markets requiring high-speed, high-density volatile memory. The write cycle time for word, page is 18ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 200-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 1.6 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-VFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL |
| Access Time | 3.5 ns |
| Memory Organization | 256M x 16 |
| Qualification | AEC-Q100 |
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