IS43LQ32640A-062TBLI-TR
IC DRAM 2GBIT LVSTL 200TFBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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The ISSI IS43LQ32640A-062TBLI-TR is a 2Gbit Low Power Double Data Rate 4 (LPDDR4) Synchronous Dynamic Random-Access Memory (SDRAM) component. This volatile memory device features a clock frequency of 1.6 GHz and an access time of 3.5 ns. The memory interface utilizes LVSTL signaling. Organized as 64M x 32, it operates with supply voltages ranging from 1.06V to 1.17V and 1.7V to 1.95V. The component is housed in a 200-TFBGA (10x14.5 mm) surface mount package and operates within a temperature range of -40°C to 95°C (TC). The write cycle time for word and page operations is 18 ns. This part is commonly found in mobile devices, automotive systems, and high-performance computing applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR4 |
| Clock Frequency | 1.6 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL |
| Access Time | 3.5 ns |
| Memory Organization | 64M x 32 |
| Programmable | Not Verified |
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