IS43DR86400E-3DBL
IC DRAM 512MBIT PAR 60TWBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI's IS43DR86400E-3DBL is a 512Mbit DDR2 SDRAM device featuring a parallel interface. Operating at a clock frequency of 333 MHz, this memory component offers an access time of 450 ps and a write cycle time of 15 ns. The device utilizes a 64M x 8 memory organization and is housed in a 60-TWBGA (8x10.5) package, suitable for surface mount applications. The operating voltage range is 1.7V to 1.9V, with an operating temperature of 0°C to 85°C (TC). This high-speed memory solution is commonly employed in applications within the computing, consumer electronics, and industrial sectors requiring efficient data storage and retrieval.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 333 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-TWBGA (8x10.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 450 ps |
| Memory Organization | 64M x 8 |
| Programmable | Not Verified |
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