IS43DR16320E-3DBLI
IC DRAM 512MBIT PAR 84TWBGAManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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The ISSI IS43DR16320E-3DBLI is a 512Mbit SDRAM DDR2 memory integrated circuit. Featuring a parallel interface, this component operates at a clock frequency of 333 MHz with an access time of 450 ps. The memory organization is 32M x 16, and the device operates within a voltage range of 1.7V to 1.9V. The write cycle time for a word page is 15ns. This volatile memory component is housed in an 84-TWBGA (8x12.5) package and is designed for surface mounting. It is specified for operation across an industrial temperature range of -40°C to 85°C. Applications for this memory component include consumer electronics, industrial automation, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 84-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 333 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 84-TWBGA (8x12.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 450 ps |
| Memory Organization | 32M x 16 |
| Programmable | Not Verified |
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