IS25WP512M-RMLA3
IC FLASH 512MBIT SERIAL 16SOICManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
Quality Control: Learn More
ISSI's IS25WP512M-RMLA3 is a 512Mbit NOR Flash memory device featuring a 1.7V to 1.95V operating voltage. This component utilizes a serial SPI interface supporting Quad I/O, QPI, and DTR modes, enabling high-speed data transfers up to 133 MHz. With an access time of 7.5 ns, it is organized as 64M x 8. The IS25WP512M-RMLA3 is housed in a 16-SOIC package and operates within an automotive temperature range of -40°C to 125°C. Its AEC-Q100 qualification makes it suitable for demanding automotive applications, as well as industrial and consumer electronics requiring robust non-volatile memory solutions. Write cycle times are specified at 50µs for word and 2ms for page operations.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 16-SOIC (0.295"", 7.50mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NOR |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 16-SOIC |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 50µs, 2ms |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Access Time | 7.5 ns |
| Memory Organization | 64M x 8 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
Request a Quote
Clients Also Buy
IS42S16160G-7TL
IC DRAM 256MBIT PAR 54TSOP II
IS43TR16512S2DL-107MBLI
IC DRAM 8GBIT PARALLEL 96LWBGA
IS64WV12816DBLL-12CTLA3-TR
IC SRAM 2MBIT PARALLEL 44TSOP II
