IS25WP512M-JLLE-TR
IC FLASH 512MBIT SPI/QUAD 8WSONManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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The ISSI IS25WP512M-JLLE-TR is a 512Mbit NOR Flash memory device featuring a high-speed SPI interface supporting Quad I/O, QPI, and DTR modes. This non-volatile memory component operates at a clock frequency of 112 MHz and is organized as 64M x 8 bits. Designed for demanding applications, it offers a supply voltage range of 1.7V to 1.95V and an operating temperature range of -40°C to 105°C (TA). The device is AEC-Q100 qualified and comes in an 8-WSON (8x6) package with an exposed pad, suitable for surface mounting. Write cycle times are 50µs for word and 1ms for page. This memory solution is utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 112 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-WSON (8x6) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 50µs, 1ms |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Memory Organization | 64M x 8 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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