IS25WE512M-RMLE
IC FLASH 512MB 1.8V SPI 16SOICManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI's IS25WE512M-RMLE is a 512Mbit NOR Flash memory device organized as 64M x 8. This non-volatile memory features a serial peripheral interface (SPI) supporting Quad I/O, Quad Peripheral Interface (QPI), and Double Transfer Rate (DTR) modes for enhanced data throughput up to 112 MHz. Designed for robust operation, it offers a supply voltage range of 1.7V to 1.95V and operates across an industrial temperature range of -40°C to 105°C. The memory boasts a word write cycle time of 50µs and a page write cycle time of 1ms. Delivered in a 16-SOIC (0.295" width) surface-mount package, this component is well-suited for applications in consumer electronics, industrial automation, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 16-SOIC (0.295"", 7.50mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NOR |
| Clock Frequency | 112 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 16-SOIC |
| Write Cycle Time - Word, Page | 50µs, 1ms |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Memory Organization | 64M x 8 |
| Programmable | Not Verified |
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