IS25WE01G-RILE-TR
IC FLASH 1GBIT SPI/QUADManufacturer: ISSI, Integrated Silicon Solution Inc
Categories: Memory
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ISSI IS25WE01G-RILE-TR is a 1Gbit NOR FLASH memory device featuring Single-Level Cell (SLC) technology. This component supports SPI, Quad I/O, Quad Peripheral Interface (QPI), and Double Transfer Rate (DTR) memory interfaces, operating at a clock frequency of 104 MHz with an access time of 10 ns. The memory organization is 128M x 8 bits. Designed for demanding applications, it operates within a voltage range of 1.7V to 1.95V and a temperature range of -40°C to 105°C. The device is supplied in a 24-LFBGA (6x8) package and is qualified to AEC-Q100, making it suitable for automotive, industrial, and high-performance computing sectors. Write cycle times are 50µs for word and 1ms for page operations.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 24-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 24-LFBGA (6x8) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 50µs, 1ms |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Access Time | 10 ns |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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