ISL6613ECB
HALF BRIDGE BASED MOSFET DRIVERManufacturer: Intersil
Categories: Gate Drivers
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The Intersil ISL6613ECB is a high-performance, half-bridge N-channel MOSFET driver designed for synchronous rectification and power supply applications. This device features two independent gate drivers capable of delivering peak output currents of 1.25A source and 2A sink, enabling efficient switching of power MOSFETs. The ISL6613ECB supports a bootstrap voltage up to 36V, facilitating the driving of high-side N-channel MOSFETs. Its non-inverting input logic simplifies control circuit design.
The 8-SOIC-EP package with an exposed pad ensures excellent thermal performance for demanding operational environments. With typical rise and fall times of 26ns and 18ns respectively, this driver is well-suited for high-frequency switching applications. The ISL6613ECB operates within a supply voltage range of 10.8V to 13.2V and is specified for operation between 0°C and 125°C (TJ). Its robust design makes it suitable for use in computing, telecommunications, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Programmable | Not Verified |