HIP6601BECB
HALF BRIDGE BASED MOSFET DRIVERManufacturer: Intersil
Categories: Gate Drivers
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The Intersil HIP6601BECB is a half-bridge based MOSFET driver, specifically designed for efficient power stage control. This non-inverting, 8-SOIC-EP packaged component features two independent gate drive channels, ideal for driving N-channel MOSFETs in synchronous configurations. With a supply voltage range of 10.8V to 13.2V and a bootstrap capability up to 15V, it is well-suited for applications requiring robust high-side drive. The device offers typical rise and fall times of 20ns, facilitating high-frequency switching. Its surface mount design and exposed pad on the 8-SOIC package ensure effective thermal management. This driver finds utility in various industrial and automotive power conversion systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 15 V |
| Supplier Device Package | 8-SOIC-EP |
| Rise / Fall Time (Typ) | 20ns, 20ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | - |
| Programmable | Not Verified |
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