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HIP6601BCB-T

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HIP6601BCB-T

HALF BRIDGE BASED MOSFET DRIVER

Manufacturer: Intersil

Categories: Gate Drivers

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The Intersil HIP6601BCB-T is a half-bridge based MOSFET driver designed for efficient power stage control. This non-inverting, synchronous gate driver IC actively drives N-channel MOSFETs in a half-bridge configuration, facilitating high-side and low-side switching. It operates with a supply voltage range of 10.8V to 13.2V and features a bootstrap capability up to 15V for the high-side gate drive. The device offers typical rise and fall times of 20ns, ensuring fast switching transitions crucial for performance in power conversion applications. Packaged in an 8-SOIC (0.154" width) surface-mount format, the HIP6601BCB-T is suitable for demanding applications within the computing, industrial, and automotive sectors where robust power management is a requirement.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature0°C ~ 125°C (TJ)
Voltage - Supply10.8V ~ 13.2V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)15 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)20ns, 20ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH-
Current - Peak Output (Source, Sink)-
ProgrammableNot Verified

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