IRGP4750DPBF
IGBT WITH RECOVERY DIODEManufacturer: International Rectifier
Categories: Single IGBTs
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International Rectifier's IRGP4750DPBF is a 650V Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, housed in a TO-247AC package, offers a continuous collector current of 70A and a pulsed collector current of 105A. Key performance metrics include a maximum power dissipation of 273W and a Vce(on) of 2V at 15V gate-emitter voltage and 35A collector current. The device features a gate charge of 105 nC and switching energy values of 1.3mJ (on) and 500µJ (off) under test conditions of 400V, 35A, 10 Ohm, and 15V. This IGBT also incorporates a recovery diode with a reverse recovery time of 150ns. Operating across a temperature range of -40°C to 175°C, the IRGP4750DPBF is suitable for industrial power conversion, motor control, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 150 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/105ns |
| Switching Energy | 1.3mJ (on), 500µJ (off) |
| Test Condition | 400V, 35A, 10Ohm, 15V |
| Gate Charge | 105 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 273 W |
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