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IRGP4750DPBF

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IRGP4750DPBF

IGBT WITH RECOVERY DIODE

Manufacturer: International Rectifier

Categories: Single IGBTs

Quality Control: Learn More

International Rectifier's IRGP4750DPBF is a 650V Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, housed in a TO-247AC package, offers a continuous collector current of 70A and a pulsed collector current of 105A. Key performance metrics include a maximum power dissipation of 273W and a Vce(on) of 2V at 15V gate-emitter voltage and 35A collector current. The device features a gate charge of 105 nC and switching energy values of 1.3mJ (on) and 500µJ (off) under test conditions of 400V, 35A, 10 Ohm, and 15V. This IGBT also incorporates a recovery diode with a reverse recovery time of 150ns. Operating across a temperature range of -40°C to 175°C, the IRGP4750DPBF is suitable for industrial power conversion, motor control, and power supply applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)150 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 35A
Supplier Device PackageTO-247AC
IGBT Type-
Td (on/off) @ 25°C50ns/105ns
Switching Energy1.3mJ (on), 500µJ (off)
Test Condition400V, 35A, 10Ohm, 15V
Gate Charge105 nC
Current - Collector (Ic) (Max)70 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)105 A
Power - Max273 W

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