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IRGP4620D-EPBF

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IRGP4620D-EPBF

IGBT WITH RECOVERY DIODE

Manufacturer: International Rectifier

Categories: Single IGBTs

Quality Control: Learn More

The International Rectifier IRGP4620D-EPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 32A, with a pulsed current rating of 36A. Its robust construction supports a maximum power dissipation of 140W. The device exhibits a low on-state voltage of 1.85V at 15V gate-emitter voltage and 12A collector current. Key switching parameters include a gate charge of 25 nC, turn-on delay of 31ns, and turn-off delay of 83ns (at 25°C). The integrated fast recovery diode demonstrates a reverse recovery time of 68ns. Packaged in a TO-247AD through-hole configuration, this IGBT is suitable for industrial and high-power conversion systems. Operating temperature range is -40°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)68 ns
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 12A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C31ns/83ns
Switching Energy75µJ (on), 225µJ (off)
Test Condition400V, 12A, 22Ohm, 15V
Gate Charge25 nC
Current - Collector (Ic) (Max)32 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)36 A
Power - Max140 W

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