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IRGB4715DPBF

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IRGB4715DPBF

IGBT 650V 21A TO220AB

Manufacturer: International Rectifier

Categories: Single IGBTs

Quality Control: Learn More

International Rectifier's IRGB4715DPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a robust 650V collector-emitter breakdown voltage and supports a continuous collector current of 21A, with a pulsed capability of 24A. The IGBT is housed in a standard TO-220AB package for through-hole mounting, facilitating ease of integration into various circuit designs. Key electrical characteristics include a maximum on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 8A collector current. Switching performance is notable, with turn-on delay (Td(on)) of 30ns and turn-off delay (Td(off)) of 100ns at 25°C, accompanied by low switching energies of 200µJ (on) and 90µJ (off) under specified test conditions. With a maximum power dissipation of 100W and an operating temperature range of -40°C to 175°C, this component is well-suited for industrial motor drives, power supplies, and uninterruptible power systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2V @ 15V, 8A
Supplier Device PackageTO-220AB
IGBT Type-
Td (on/off) @ 25°C30ns/100ns
Switching Energy200µJ (on), 90µJ (off)
Test Condition400V, 8A, 50Ohm, 15V
Gate Charge30 nC
Current - Collector (Ic) (Max)21 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)24 A
Power - Max100 W

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