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IRGB4607DPBF

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IRGB4607DPBF

IGBT WITH RECOVERY DIODE

Manufacturer: International Rectifier

Categories: Single IGBTs

Quality Control: Learn More

This International Rectifier IGBT, part number IRGB4607DPBF, is a robust Insulated Gate Bipolar Transistor designed for demanding applications. Featuring a 600V collector-emitter breakdown voltage and a continuous collector current rating of 11A (12A pulsed), this device offers efficient power switching. The IGBT exhibits a low on-state voltage of 2.05V at 4A collector current and 15V gate voltage, contributing to reduced conduction losses. With a typical gate charge of 9nC, it facilitates fast switching transitions. The integrated fast recovery diode boasts a reverse recovery time of 48ns, crucial for minimizing switching losses in inductive load applications. Packaged in a TO-220AB through-hole configuration, it supports a maximum power dissipation of 58W and operates across a wide temperature range of -40°C to 175°C. This component finds utility in industrial motor drives, power supplies, and welding equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)48 ns
Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 4A
Supplier Device PackageTO-220AB
IGBT Type-
Td (on/off) @ 25°C27ns/120ns
Switching Energy140µJ (on), 62µJ (off)
Test Condition400V, 4A, 100Ohm, 15V
Gate Charge9 nC
Current - Collector (Ic) (Max)11 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)12 A
Power - Max58 W

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