IRG8P50N120KD-EPBF
IRG8P50N120 - DISCRETE IGBT WITHManufacturer: International Rectifier
Categories: Single IGBTs
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The International Rectifier IRG8P50N120KD-EPBF is a discrete IGBT designed for high-voltage, high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed capability of 105 A. The TO-247AD package facilitates through-hole mounting. With a maximum power dissipation of 350 W and a gate charge of 315 nC, the IRG8P50N120KD-EPBF exhibits typical on-state voltage of 2V at 15V Vge and 35A Ic. Switching characteristics include turn-on and turn-off delays of 35 ns and 190 ns respectively, with switching energies of 2.3 mJ (on) and 1.9 mJ (off) under specified test conditions. This device is suitable for use in industrial motor drives, power supplies, and renewable energy systems. Operating temperature range is -40°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 170 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 35ns/190ns |
| Switching Energy | 2.3mJ (on), 1.9mJ (off) |
| Test Condition | 600V, 35A, 5Ohm, 15V |
| Gate Charge | 315 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 350 W |
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