International Rectifier's IRG8P45N65UD1-EPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component offers a robust 650V breakdown voltage and a continuous drain current rating of 45A, making it suitable for power factor correction, motor drives, and renewable energy systems. Its advanced trench gate field-stop technology ensures excellent switching characteristics with low on-state voltage and minimal switching losses. The IRG8P45N65UD1-EPBF is packaged in bulk for high-volume manufacturing. This device is a key enabler for high-efficiency power conversion in industrial automation, electric vehicles, and power supply units.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk