IRG8P40N120KD-EPBF
IRG8P40N120 - DISCRETE IGBT WITHManufacturer: International Rectifier
Categories: Single IGBTs
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International Rectifier's IRG8P40N120KD-EPBF is a discrete IGBT designed for high voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current (Ic) rating of 60 A, with a pulsed collector current (Icm) of 75 A. With a maximum power dissipation of 305 W and a collector-emitter saturation voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 25A collector current, it is suitable for demanding power conversion tasks. The TO-247AD package facilitates through-hole mounting. Key parameters include a gate charge of 240 nC and switching energies of 1.6mJ (on) and 1.8mJ (off) at 600V, 25A, 10 Ohm, 15V. Operating temperature range is -40°C to 150°C (TJ). This device finds application in industrial power supplies, motor drives, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 80 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 25A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 40ns/245ns |
| Switching Energy | 1.6mJ (on), 1.8mJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 240 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 305 W |
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