IRG8P25N120KD-EPBF
IRG8P25N120 - DISCRETE IGBT WITHManufacturer: International Rectifier
Categories: Single IGBTs
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The International Rectifier IRG8P25N120KD-EPBF is a discrete IGBT designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 40 A, with a pulsed current rating of 45 A. It offers a maximum power dissipation of 180 W and a low on-state voltage (Vce(on)) of 2V at 15V gate-source voltage and 15A collector current. Key switching characteristics include a gate charge of 135 nC and switching energies of 800 µJ (on) and 900 µJ (off) under specified test conditions (600V, 15A, 10 Ohm, 15V). The device has a typical turn-on delay (Td(on)) of 20 ns and a turn-off delay (Td(off)) of 170 ns. Packaged in a TO-247AD through-hole configuration, this IGBT operates within a temperature range of -40°C to 150°C (TJ). It is suitable for use in power electronics systems across various industries, including industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 70 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 15A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/170ns |
| Switching Energy | 800µJ (on), 900µJ (off) |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Gate Charge | 135 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 180 W |
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